vishay siliconix SIS430DN document number: 69025 s-82655-rev. a, 03-nov-08 www.vishay.com 1 n-channel 25-v (d-s) mosfet features ? halogen-free ? trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested applications ? dc/dc converter - pol - server product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 25 0.0051 at v gs = 10 v 35 13 nc 0.0069 at v gs = 4.5 v 35 ordering information: SIS430DN-t1-ge3 (lead (pb)-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak ? 1212-8 bottom view n - c hannel m os fet g d s notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( http://www.vishay.com/ppg?73257 ). the powerpak 1212 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequat e bottom side solder interconnection. e. rework conditions: manual soldering with a sold ering iron is not recommended for leadless components. f. maximum under steady state conditions is 81 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 25 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 35 a a t c = 70 c 35 a t a = 25 c 21.5 b, c t a = 70 c 17 b, c pulsed drain current i dm 60 avalanche current l = 0.1 mh i as 30 avalanche energy e as 45 mj continuous source-drain diode current t c = 25 c i s 35 a a t a = 25 c 3.2 b, c maximum power dissipation t c = 25 c p d 52 w t c = 70 c 33 t a = 25 c 3.8 b, c t a = 70 c 2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 10 s r thja 24 33 c/w maximum junction-to-case (drain) steady state r thjc 1.9 2.4 free datasheet http:///
www.vishay.com 2 document number: 69025 s-82655-rev. a, 03-nov-08 vishay siliconix SIS430DN notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 25 v v ds temperature coefficient v ds /t j i d = 250 a 25 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 25 v, v gs = 0 v 1 a v ds = 25 v, v gs = 0 v, t j = 55 c 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0042 0.0051 v gs = 4.5 v, i d = 18.5 a 0.0056 0.0069 forward transconductance a g fs v ds = 15 v, i d = 20 a 61 s dynamic b input capacitance c iss v ds = 12.5 v, v gs = 0 v, f = 1 mhz 1600 pf output capacitance c oss 410 reverse transfer capacitance c rss 155 total gate charge q g v ds = 12.5 v, v gs = 10 v, i d = 20 a 26.5 40 nc v ds = 12.5 v, v gs = 4.5 v, i d = 20 a 13 19.5 gate-source charge q gs 4.6 gate-drain charge q gd 4.1 gate resistance r g f = 1 mhz 1.5 3 tu r n - o n d e l ay t i m e t d(on) v dd = 12.5 v, r l = 1.25 i d ? 10 a, v gen = 4.5 v, r g = 1 20 30 ns rise time t r 12 20 turn-off delay time t d(off) 25 40 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = 12.5 v, r l = 1.25 i d ? 10 a, v gen = 10 v, r g = 1 10 15 rise time t r 10 15 turn-off delay time t d(off) 20 30 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 35 a pulse diode forward current i sm 60 body diode voltage v sd i s = 10 a, v gs = 0 v 0.8 1.2 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 35 55 ns body diode reverse recovery charge q rr 35 55 nc reverse recovery fall time t a 17 ns reverse recovery rise time t b 18
document number: 69025 s-82655-rev. a, 03-nov-08 www.vishay.com 3 vishay siliconix SIS430DN typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10thr u 4 v v gs =3 v v gs =2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.002 0.003 0.004 0.005 0.006 0.007 0.00 8 0 102030405060 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 06121 8 24 30 i d =20a v ds =12.5 v v ds =20 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t c = 25 c t c = 125 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c =- 55 c c rss 0 400 8 00 1200 1600 2000 0 5 10 15 20 25 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs =10 v v gs =4.5 v i d =20a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 69025 s-82655-rev. a, 03-nov-08 vishay siliconix SIS430DN typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.000 0.003 0.006 0.009 0.012 0.015 0246 8 10 t j = 25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) i d =20a 0.01 0 1 40 50 10 600 time (s) 30 20 power (w) 0.1 10 100 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 0.1 1ms 10 ms 1s 10 s 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * dc 100 s b v dss limited 100 ms v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
document number: 69025 s-82655-rev. a, 03-nov-08 www.vishay.com 5 vishay siliconix SIS430DN typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 20 40 60 8 0 100 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0 10 20 30 40 50 60 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 69025 s-82655-rev. a, 03-nov-08 vishay siliconix SIS430DN typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69025 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 81 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective transient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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